• DocumentCode
    1056522
  • Title

    Microfabrication of high-frequency vacuum electron devices

  • Author

    Ives, R.Lawrence

  • Author_Institution
    Calabasas Creek Res. Inc., Saratoga, CA, USA
  • Volume
    32
  • Issue
    3
  • fYear
    2004
  • fDate
    6/1/2004 12:00:00 AM
  • Firstpage
    1277
  • Lastpage
    1291
  • Abstract
    Advances in manufacturing technology for microstructures are allowing new opportunities for vacuum electron devices producing radio-frequency (RF) radiation. Specifically, the capability to produce small circuit structures is allowing development of RF devices at frequencies impractical with traditional machining technology. This is generating increased interest in applications in the submillimeter and terahertz frequency range. High-power RF devices in this frequency range are needed for medical, communications, defense, and homeland security applications. This paper describes the most promising microfabrication techniques applicable to high-frequency RF devices and examples of recent applications.
  • Keywords
    electron device manufacture; submillimetre wave devices; high-frequency vacuum electron devices; high-power RF devices; manufacturing technology; microfabrication techniques; small circuit structures; submillimeter frequency; terahertz frequency; Chemicals; Electron devices; Electron mobility; Field emitter arrays; Machining; Production; Radio frequency; Spectroscopy; Submillimeter wave technology; Vacuum technology; BWO; Backward wave oscillator; DRIE; EDM; FEA; FIB; LIGA; RF source; SU-; cold cathode; deep reactive ion etching; electrical discharge machining; field emission; field emitter array; focused ion beam; radiation; spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2004.827595
  • Filename
    1321291