Intensity Noise in a Wavelength-Locked Fabry–Perot Laser Diode to a Spectrum Sliced ASE

Author

Park, Kun-youl ; Lee, Chang-Hee

Author_Institution

Korea Telecomm Network Infra Lab., Daejeon

Volume

44

Issue

3

fYear

2008

fDate

3/1/2008 12:00:00 AM

Firstpage

209

Lastpage

215

Abstract

We derived analytic expression for the relative intensity noise (RIN) of a wavelength-locked Fabry-Perot laser diode (FP LD) in a single mode region. The RIN of the wavelength-locked output is a function of the photon density and the photon life time. It also depends on the wavelength detuning and the injected amplified spontaneous emission (ASE) power. We investigated the modulation transfer function of the wavelength-locked FP LD and its dependence on wavelength detuning. The analytic result has good agreement with the simulation result.

Keywords

Fabry-Perot interferometers; optical transfer function; semiconductor lasers; Fabry-Perot laser diode; amplified spontaneous emission; modulation transfer function; photon density; photon life time; relative intensity noise; Analytical models; Bandwidth; Costs; Diode lasers; Optical fiber networks; Passive optical networks; Semiconductor device noise; Spontaneous emission; Transfer functions; Wavelength division multiplexing; Incoherent light injection; spectrum sliced ASE; wavelength-division multiplexed passive optical network (WDM-PON); wavelength-locked Fabry–Perot laser diode;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2007.911685

Filename

4446040