Optoelectronic and structural properties of polysilicon produced by excimer laser and furnace crystallisation of hydrogenated amorphous silicon (a-Si:H)

Author

Dyer, T.E. ; Marshall, J.M. ; Pickin, W. ; Hepburn, A.R. ; Davies, J.F.

Author_Institution

Dept. of Mater. Eng., Univ. Coll. of Swansea, UK

Volume

141

Issue

1

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

15

Lastpage

18

Abstract

The authors report on the optoelectronic and structural properties of polysilicon produced by excimer (ArF) laser crystallisation of undoped hydrogenated amorphous silicon (a-Si:H). Micro-structure and average grain size are determined by TEM and electron diffraction. A maximum areal grain size of 0.2 μm² is observed in excimer (ArF) laser crystallised polysilicon, grain size is also demonstrated to be dependent on the a-Si:H precursor deposition temperature. UV reflectivity and FTIR spectroscopy are employed to investigate the degree of crystallinity and atomic bonding configurations. DC conductivity measurements are used to infer information on transport properties. These data are compared with studies of low-temperature (600°C) furnace crystallised polysilicon

Keywords

Fourier transform spectra; electrical conductivity of crystalline semiconductors and insulators; electron diffraction examination of materials; elemental semiconductors; grain size; infrared spectra of inorganic solids; laser beam annealing; optical properties of substances; recrystallisation annealing; reflectivity; refractive index; silicon; transmission electron microscope examination of materials; 600 C; ArF; ArF excimer laser crystallisation; DC conductivity measurements; FTIR spectroscopy; Si; Si:H; TEM; UV reflectivity; a-Si:H; atomic bonding configurations; average grain size; crystallinity; electron diffraction; furnace crystallisation; hydrogenated amorphous Si; microstructure; optoelectronic properties; polycrystalline Si; polysilicon; precursor deposition temperature; semiconductors; structural properties; transport properties; undoped amorphous Si:H;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19949959

Filename

278066