DocumentCode
1057552
Title
Proposed new heterojunction device for infrared detection
Author
Spratt, J.P. ; Schwarz, R.F. ; Cheng, V.M.
Author_Institution
RCA Laboratories, Princeton, NJ
Volume
24
Issue
8
fYear
1977
fDate
8/1/1977 12:00:00 AM
Firstpage
1117
Lastpage
1119
Abstract
A novel heterojunction diode structure is proposed in which a thin metal layer, inserted between two dissimilar semiconductors, pins the surface potential of each semiconductor with respect to a common reference level (the metal Fermi energy). The resultant structure will, in principle, permit the control of interface potential in heterojunctions.
Keywords
Absorption; Heterojunctions; Infrared detectors; Optical devices; Optical scattering; Radiative recombination; Region 1; Region 2; Silicon; Spontaneous emission;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18886
Filename
1479078
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