• DocumentCode
    1057606
  • Title

    Physical interpretation of the noise reduction for the generation—Recombination current due to SRH centers in the space-charge layer

  • Author

    van Vliet, K.M. ; Der Ziel, Van A.

  • Author_Institution
    University of Montreal, Montreal, Que., Canada
  • Volume
    24
  • Issue
    8
  • fYear
    1977
  • fDate
    8/1/1977 12:00:00 AM
  • Firstpage
    1127
  • Lastpage
    1129
  • Abstract
    The expressions for the noise in the generation-recombination current due to SRH centers in the space-charge layer of junction devices have been recast in a simple form. For low forward bias the noise reduction (Γ2≈ 0.75) is shown to stem from the two-step recombination process, while the high-frequency reduction Γ2≳ 0.5 stems from the noncorrelation of electron and hole transport.
  • Keywords
    Charge carrier density; Charge carrier processes; Density estimation robust algorithm; Frequency; Low-frequency noise; Mathematics; Noise generators; Noise reduction; Spontaneous emission; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18891
  • Filename
    1479083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1057606