• DocumentCode
    1057748
  • Title

    Interdigitated terahertz emitters

  • Author

    Acuna, G.P. ; Buersgens, F.F. ; Lang, C. ; Handloser, M. ; Guggenmos, A. ; Kersting, R.

  • Author_Institution
    Univ. of Munich, Munich
  • Volume
    44
  • Issue
    3
  • fYear
    2008
  • Firstpage
    229
  • Lastpage
    231
  • Abstract
    A large aperture terahertz (THz) emitter is presented. The planar photoconducting GaAs device consists of a periodical interdigitated Schottky structure. Additional trenches in the GaAs have double periodicity. They are required for far-field THz emission. Terahertz field strengths of 15 V/cm were achieved.
  • Keywords
    III-V semiconductors; Schottky diodes; gallium arsenide; photoconducting devices; GaAs; interdigitated terahertz emitters; large aperture terahertz emitter; periodical interdigitated Schottky structure; planar photoconducting device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20082905
  • Filename
    4446196
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1057748