Power characteristics of AIN/GaN MISFETs on sapphire substrate

AIN/GaN metal insulator semiconductor field effect transistors (MISFETs) on a sapphire substrate with 5 nm AIN barrier layer were fabricated using a simple wet-etching technique. Fabricated AIN/GaN MISFETs with 1 mum gate length and 200 mum gate width showed a maximum drain current density of 380 mA/mm and a peak extrinsic transconductance of 85 mS/mm. Power characteristics were measured at 2 GHz and showed an output power density of 850 mW/mm with 23.8% PAE and 13.1 dB linear gain at a drain bias of 15 V.