DocumentCode
1057883
Title
IIa-8 properties of gallium-, aluminum-, and indium-doped silicon as extrinsic detector materials
Author
Baron, R. ; Young ; Baukus, James P. ; Marsh, O.J.
Volume
24
Issue
9
fYear
1977
fDate
9/1/1977 12:00:00 AM
Firstpage
1195
Lastpage
1195
Keywords
Chemical lasers; Chemical vapor deposition; Detectors; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Production; Sheet materials; Silicon; Temperature measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18919
Filename
1479111
Link To Document