• DocumentCode
    1058138
  • Title

    IIIb-5 properties of alternate-monolayer (GaAs)n(AlAs)mcrystals

  • Author

    Gossard, Arthur C.

  • Volume
    24
  • Issue
    9
  • fYear
    1977
  • fDate
    9/1/1977 12:00:00 AM
  • Firstpage
    1204
  • Lastpage
    1204
  • Keywords
    Carrier confinement; DH-HEMTs; Electrons; Gallium arsenide; Heterojunctions; Indium phosphide; Molecular beam epitaxial growth; Nonhomogeneous media; Photonic band gap; Radiative recombination;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18945
  • Filename
    1479137
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1058138