DocumentCode

1058173

Title

IIIb-8 highly reliable 10 W and 30% P-N junction GaAs Read diode

Author

Nishitani, Kenji ; Sawano, Hisaya ; Ishii, Takuro ; Mitsui, S.

Volume

24

Issue

9

fYear

1977

fDate

9/1/1977 12:00:00 AM

Firstpage

1205

Lastpage

1206

Keywords

Annealing; Conductivity; Gallium arsenide; Implants; Indium phosphide; Life testing; P-n junctions; Radio frequency; Schottky diodes; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1977.18948

Filename

1479140