DocumentCode
1058349
Title
Schottky merged BiCMOS structures
Author
Rofail, Samir S. ; Elmasry, Mohamed I.
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume
29
Issue
3
fYear
1994
fDate
3/1/1994 12:00:00 AM
Firstpage
356
Lastpage
361
Abstract
A new merged BiCMOS structure is presented. It incorporates a Schottky diode between the base and the collector of the n-p-n bipolar transistor. The structure offers the same reduced area advantage of merged over conventional BiCMOS, and is shown to have granted latchup immunity to BiCMOS circuits. The device simulations using HSPICE verify the latchup immunity
Keywords
BiCMOS integrated circuits; SPICE; Schottky-barrier diodes; circuit analysis computing; circuit reliability; integrated circuit technology; HSPICE; Schottky diode; Schottky merged BiCMOS structures; device simulations; latchup immunity; n-p-n bipolar transistor; BiCMOS integrated circuits; Bipolar transistors; CMOS process; Circuit simulation; MOSFETs; Noise measurement; Schottky diodes; Turning; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.278361
Filename
278361
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