DocumentCode
1058760
Title
The effect of cosmic rays on the soft error rate of a DRAM at ground level
Author
O´Gorman, Timothy J.
Author_Institution
IBM Corp., Essex Junction, VT, USA
Volume
41
Issue
4
fYear
1994
fDate
4/1/1994 12:00:00 AM
Firstpage
553
Lastpage
557
Abstract
This paper provides conclusive evidence that cosmic rays cause soft errors in commercial dynamic RAM (DRAM) chips at ground level. Cosmic-ray-induced soft errors in electronic components have long been a problem for the designers of satellites and spacecraft, but they have not generally been considered to be an important influence on memory chip soft error rate (SER) in terrestrial environments. In an experiment designed to determine the effect of cosmic radiation on the SER of a sample of DRAM chips at ground level, the SER of a large number of chips was measured at various locations and altitudes around the US: near sea level in Essex Junction, VT; 200 m underground in a Kansas salt mine; at an altitude of 1.6 km in Boulder, CO; and at 3.1 km in Leadville, CO. The results reported here show that even at sea level there is a significant component of the SER that can be attributed to the effects of cosmic rays, and that the magnitude of the effects increases dramatically at higher altitudes
Keywords
DRAM chips; circuit reliability; cosmic ray effects and interactions; integrated circuit testing; 1.6 km; 200 m; 3.1 km; DRAM chips; SER; altitude effects; cosmic rays; ground level; soft error rate; terrestrial environment; Cosmic rays; DRAM chips; Electronic components; Error analysis; Random access memory; Satellites; Sea level; Sea measurements; Semiconductor device measurement; Space vehicles;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.278509
Filename
278509
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