Electron-beam controlled switching using quartz and polycrystalline ZnS

Author

Jiang, Weihua ; Zinsmeyer, Kim ; Less, Melissa ; Schoenbach, Karh H. ; Kristiansen, M.

Author_Institution

Lab. of Beam Technol., Nagaoka Univ. of Technol., Niigata, Japan

Volume

41

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

582

Lastpage

586

Abstract

Results of electron-beam controlled switching experiments with switch samples of quartz crystal and polycrystalline zinc selenide (ZnSe) are presented. For switch samples of both materials, drastic reductions of the switch resistance were induced by the electron beam. The quartz sample showed very fast temporal response (less than 1 ns) with potential applicability for current control. The ZnSe samples, on the other hand, showed longer current transients (on the order of 10 ns) with exponential development of the switch resistance after the electron beam pulse

Keywords

II-VI semiconductors; electron beam applications; pulsed power technology; quartz; semiconductor switches; switching; 1 to 10 ns; SiO₂; ZnSe; current control; electron-beam controlled switching; polycrystalline ZnS; quartz; switch resistance; temporal response; Charge carriers; Conducting materials; Crystalline materials; Dark current; Electron beams; Laboratories; Optical control; Optical pulses; Optical switches; Zinc compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.278513

Filename

278513