• DocumentCode
    105888
  • Title

    Photonic Crystal Cavity With Double Heterostructure in GaN Bulk

  • Author

    Yu-Chieh Cheng ; Dong-Po Cai ; Chii-Chang Chen ; Chia-Hua Chan ; Chien-Chieh Lee ; Ya-Lun Tsai

  • Author_Institution
    Dept. of Opt. & Photonics, Nat. Central Univ., Jhongli, Taiwan
  • Volume
    5
  • Issue
    5
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    2202606
  • Lastpage
    2202606
  • Abstract
    In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/ cm2 . The Q-factor of the cavity is measured to be as high as 104.
  • Keywords
    III-V semiconductors; Q-factor; gallium compounds; optical pumping; photonic crystals; wide band gap semiconductors; bulk materials; double heterostructure; high Q-factor; optical pumping; photonic crystal cavity; power 0.9 mW; power density; resonant mode; wavelength 362 nm; Cavity resonators; Gallium nitride; Laser excitation; Lattices; Photonic crystals; Photonics; Q-factor; GaN; Photonic Crystals; Q-factor; double heterostructure;
  • fLanguage
    English
  • Journal_Title
    Photonics Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0655
  • Type

    jour

  • DOI
    10.1109/JPHOT.2013.2280343
  • Filename
    6588284
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=105888