Elimination of cross sensitivity in a three-dimensional magnetic sensor

Author

Misra, Durgamadhab ; Wang, Bingda

Author_Institution

Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA

Volume

41

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

622

Lastpage

624

Abstract

In three-dimensional (3-D) integrated magnetic sensor design, cross-axis sensitivities among the various components of the magnetic field have been a problem. In this brief it is demonstrated that complete elimination of the cross-sensitivity is possible if a 3-D magnetic sensor is implemented in BiCMOS technology. A compact device structure is designed to detect the three components of the magnetic field vector by placing a split-collector magnetotransistor and a split-drain MOSFET adjacent to each other. Measured sensitivities of the sensor are presented

Keywords

BiCMOS integrated circuits; VLSI; electric sensing devices; magnetic field measurement; sensitivity analysis; 3D integrated magnetic sensor design; BiCMOS technology; compact device structure; cross sensitivity elimination; current splitting; magnetic field vector components detection; split-collector magnetotransistor; split-drain MOSFET; three-dimensional magnetic sensor; Electron devices; Lighting control; Magnetic devices; Magnetic field measurement; Magnetic sensors; Optical control; Photothyristors; Stimulated emission; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.278523

Filename

278523