Report on a joint BIPM-EUROMET project for the fabrication of QHE samples by the LEP

Author

Piquemal, Francois ; Geneves, Gerard ; Delahaye, Francois ; Andre, Jean-pierre ; Patillon, Jean-Noel ; Frijlink, Peter

Author_Institution

Lab. Primaire d´´Electr.-Magnetisme, Fontenay-aux-Roses, France

Volume

42

Issue

2

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

264

Lastpage

268

Abstract

The quantum Hall effect (QHE) samples fabricated by LEP according to specifications intended to optimize their usefulness in metrology are described. Their measured characteristics, notably carrier density, carrier mobility at zero magnetic field, dependence of the quantized resistance on temperature, measuring current, and the quality of electrical contacts, are reported

Keywords

III-V semiconductors; carrier density; carrier mobility; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; semiconductor technology; specimen preparation; AlGaAs-GaAs; BIPM-EUROMET project; LEP; MOVPE; QHE samples; carrier density; carrier mobility; electrical contacts; measuring current; protected wafer; quantized resistance; quantum Hall effect; temperature; unprotected wafer; zero magnetic field; Charge carrier density; Current measurement; Density measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Fabrication; Hall effect; Magnetic field measurement; Metrology;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.278562

Filename

278562