DocumentCode
1059378
Title
High-Speed Time Switch Using GaAs LSI Technology
Author
Shimazu, Yoshihiro ; Takada, Tohru
Author_Institution
NTT, Kanagawa-ken, Japan
Volume
4
Issue
1
fYear
1986
fDate
1/1/1986 12:00:00 AM
Firstpage
32
Lastpage
38
Abstract
A high-speed time switch using GaAs LSI technology is discussed. A new high-speed time switch structure consisting primarily of shift registers is proposed. This structure requires relatively minimal hardware in designing LSI. As the first stage of study, a GaAs 4-channel time switch LSI is manufactured using this structure. Switching speed of the LSI is 2 Gbits/s and the power consumption 0.64 W/chip. Largecapacity switch configurations using this time switch are proposed. This high-speed time switch makes possible the time-division switching of such services as T.V. and high-definition T.V.
Keywords
Communication switching; High-speed integrated circuits; Large-scale integration; Switching, communication; Circuits; Communication switching; Gallium arsenide; Hardware; Large scale integration; Manufacturing; Optical switches; Random access memory; Read-write memory; Shift registers;
fLanguage
English
Journal_Title
Selected Areas in Communications, IEEE Journal on
Publisher
ieee
ISSN
0733-8716
Type
jour
DOI
10.1109/JSAC.1986.1146290
Filename
1146290
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