DocumentCode
1060629
Title
Calculation of potential profiles in the junction charge-coupled device
Author
Herman, Gérard C. ; Hartgring, Cornelis D. ; Kleefstra, Marcus
Author_Institution
Delft University of Technology, Delft, The Netherlands
Volume
25
Issue
7
fYear
1978
fDate
7/1/1978 12:00:00 AM
Firstpage
845
Lastpage
847
Abstract
A method is presented for calculating the potential in a junction charge-coupled device (JCCD) by solving the two-dimensional Poisson equation numerically. This method is used to analyze the possibility of obtaining a smooth potential profile in the transfer channel by a phosphorus ion implantation under the gates.
Keywords
Boundary conditions; Charge coupled devices; Diodes; Electrons; Epitaxial layers; Ion implantation; Lead compounds; Poisson equations; Potential well; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19183
Filename
1479577
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