DocumentCode
1061369
Title
Application of molecular-beam epitaxial layers to heterostructure lasers
Author
Casey, H.C., Jr. ; Cho, A.Y. ; Barnes, P.A.
Author_Institution
Bell Laboratories, Murray Hill, NJ
Volume
11
Issue
7
fYear
1975
fDate
7/1/1975 12:00:00 AM
Firstpage
467
Lastpage
470
Abstract
GaAs-Alx Ga1-x As double-heterostructure (DH) lasers with Si-doped n-type active layers have been prepared by molecular-beam epitaxy (MBE) and the laser properties evaluated. With 0.2-μm-thick active layers and 300-μm cavity lengths, typical room-temperature threshold current densities Jth of 
A/cm2and best values of 
A/cm2have been obtained. Stripe-geometry devices were run CW up to 9°C. Photoluminescence (PL) studies of single layers grown with the donors Si, Ge, and Sn show that the luminescent intensity for MBE n-type layers depends on the substrate temperature during growth. The PL intensity for Sn-doped MBE layers was greater than for high-quality Sn-doped liquid-phase-epitaxial layers.
A/cm2and best values of A/cm2have been obtained. Stripe-geometry devices were run CW up to 9°C. Photoluminescence (PL) studies of single layers grown with the donors Si, Ge, and Sn show that the luminescent intensity for MBE n-type layers depends on the substrate temperature during growth. The PL intensity for Sn-doped MBE layers was greater than for high-quality Sn-doped liquid-phase-epitaxial layers.Keywords
DH-HEMTs; Epitaxial growth; Heating; Impurities; Manganese; Molecular beam epitaxial growth; Photoluminescence; Temperature; Threshold current; Tin;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1975.1068642
Filename
1068642
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