DocumentCode
1062514
Title
Effect of heavy doping on the properties of high-low junction
Author
Sinha, Amitabha ; Chattopadhyaya, S.K.
Author_Institution
Kurukshetra University, Kurukshetra, India
Volume
25
Issue
12
fYear
1978
fDate
12/1/1978 12:00:00 AM
Firstpage
1412
Lastpage
1414
Abstract
The minority carrier reflecting properties of the high-low junction have been studied, taking into account the heavy doping effects. It has been observed that the junction leakage velocity attains a minimum value for a particular value of impurity concentration in the heavily doped region, when an empirical relationship giving bandgap narrowing as a function of impurity concentration in silicon is utilized.
Keywords
Bipolar transistors; Circuits; Doping; Electrical resistance measurement; Electron devices; Impurities; Low voltage; Photovoltaic cells; Silicon; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19366
Filename
1479760
Link To Document