DocumentCode
1062640
Title
VMOS reliability
Author
Edwards, John R. ; Bhatti, Inderjit S. ; Fuller, Earl
Author_Institution
American Microsystems, Inc., Santa Clara, CA
Volume
26
Issue
1
fYear
1979
fDate
1/1/1979 12:00:00 AM
Firstpage
43
Lastpage
48
Abstract
Whenever a new technology such as VMOS emerges, one key element to its success is the reliability of the products manufactured in that technology. The results of a reliability study to examine the fundamental VMOS device stability, high-temperature operating life (HTOL) failure rates, and electrostatic protection are presented for the VMOS technology. Experimental data for more than five (5) million device-hours of HTOL predict a reliability failure rate of less than 0.01 percent/1000 h at 70°C for products fabricated in the VMOS technology. In addition, an electrostatic protection capability greater than 1800 V is possible with specially designed VMOS input protection devices.
Keywords
Circuits; Electrostatics; Etching; MOS devices; P-n junctions; Protection; Resistors; Stability; Substrates; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19377
Filename
1479955
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