Optimum design for high-power and high-efficiency GaAs Hi-Lo IMPATT diodes

Author

Nishitani, Kenji ; Sawano, Hiroshi ; Ishihara, Osamu ; Ishii, Takashi ; Mitsui, Shigeru

Author_Institution

Mitsubishi Electric Corporation, Itami, Hyogo, Japan

Volume

26

Issue

3

fYear

1979

fDate

3/1/1979 12:00:00 AM

Firstpage

210

Lastpage

214

Abstract

Optimum structure parameters of GaAs hi-lo IMPATT diodes to give a high-efficiency and a high-output power are experimentally determined in the frequency range from 7 to 18 GHz. The highest efficiency is obtained at any frequency when a diode has a punch-through factor of about 0.6 and is depleted with an electric field strength of 10 kV/cm at the end of the lo region under operation. The optimum lo-region carrier concentration to achieve the highest efficiency and the upper limit of a junction area to obtain a high-output power without decreasing efficiency are found to be simply related to frequency by the following equations: $(N_{L})_{opt} = (4 \\times 10^{14}) \\cdot (f/7)^{3}$ cm^-3and $(S_{j})_{\\max } = (20 \\times 10^{-4}) \\cdot (f/10)^{-1.9})$ cm²), respectively, where $f$ is in gigahertz.

Keywords

Electron devices; Frequency; Gallium arsenide; Photovoltaic cells; Photovoltaic systems; Production; Semiconductor diodes; Solar power generation; Solid state circuits; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1979.19406

Filename

1479984