DocumentCode
1063269
Title
Elevated electrode integrated circuits
Author
Sakai, Tetsushi ; Yamamoto, Yousuke ; Kobayashi, Yoshiji ; Yamauti, Hironori ; Ishitani, Tsunehachi ; Sudo, Tsuneta
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume
26
Issue
4
fYear
1979
fDate
4/1/1979 12:00:00 AM
Firstpage
379
Lastpage
385
Abstract
We have developed a new device structure for a bipolar integrated circuit with a propagation delay time of 85 ps/gate and a speed-power product of 0.19 pJ. The remarkable feature of this integrated circuit is its overhanging structure of elevated emitter and collector electrodes, resistors, and interconnections. This paper describes the structure, fabrication process, and performance of this integrated circuit.
Keywords
Bipolar integrated circuits; Electrodes; Fabrication; High speed integrated circuits; Integrated circuit interconnections; Integrated circuit technology; Logic circuits; Logic devices; Propagation delay; Resistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19438
Filename
1480016
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