DocumentCode
1063565
Title
Leakage current mechanism in sub-micron polysilicon thin-film transistors
Author
Olasupo, K.R. ; Hatalis, M.K.
Author_Institution
AT&T Bell Labs., Allentown, PA, USA
Volume
43
Issue
8
fYear
1996
fDate
8/1/1996 12:00:00 AM
Firstpage
1218
Lastpage
1223
Abstract
We have studied leakage current in sub-micron p-channel polysilicon thin-film-transistor. Our study revealed that thermionic emission is the dominant mechanism at low drain bias (-0.1 V) while thermionic field emission dominate at moderately high drain bias. At high drain bias (>-5.0 V), tunneling was observed to be the dominant leakage mechanism
Keywords
elemental semiconductors; leakage currents; semiconductor device models; silicon; thin film transistors; tunnelling; -0.1 to -5 V; 0.35 to 1 mum; Si-SiO2; coded channel length; drain bias dependence; leakage current mechanism; leakage current model; p-channel polysilicon TFT; sub-micron polysilicon thin-film transistors; thermionic emission; thermionic field emission; tunneling; Active matrix liquid crystal displays; Annealing; Fabrication; Leakage current; Silicon; Temperature dependence; Thermionic emission; Thin film transistors; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.506772
Filename
506772
Link To Document