DocumentCode
1063693
Title
Calculation of the optimum electron energy of a dedicated storage ring for X-ray lithography
Author
Betz, Hans ; Fey, Friedrich Karl ; Heuberger, Anton ; Tischer, Peter
Author_Institution
Institut für Festkörpertechnologie der Fraunhofer-Gesellschaft, München, F. R. Germany
Volume
26
Issue
4
fYear
1979
fDate
4/1/1979 12:00:00 AM
Firstpage
693
Lastpage
698
Abstract
Depending on the electron energy of a storage ring, exposure time and contrast due to the mask absorber are calculated. Different combinations of beam-line windows, mask membranes, and thicknesses of absorber assuming the use of PMMA resist are taken into account. The influence of electrons produced in the substrate and backscattered into the resist is also numerically estimated. From these evaluations it is concluded that the optimum electron energy of a storage ring for X-ray lithography is 0.9 GeV at a magnetic field of 1.5 T in the deflection magnets.
Keywords
Biomembranes; Costs; Electron beams; Helium; Magnets; Orbital calculations; Resists; Storage rings; Synchrotron radiation; X-ray lithography;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19478
Filename
1480056
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