DocumentCode
1064168
Title
High-Brightness Quantum Well Tapered Lasers
Author
Sumpf, Bernd ; Hasler, Karl-Heinz ; Adamiec, Pawel ; Bugge, Frank ; Dittmar, Frank ; Fricke, Jörg ; Wenzel, Hans ; Zorn, Martin ; Erbert, Götz ; Trankle, Gunther
Author_Institution
Dept. of Optoelectron., Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
Volume
15
Issue
3
fYear
2009
Firstpage
1009
Lastpage
1020
Abstract
High-power quantum well lasers with high brightness in the spectral range between 650 nm and 1080 nm will be presented. Improved layer structures with a narrow vertical far-field divergence down to angles of 15deg (full-width at half-maximum) were developed. For these layer structures, optimized tapered lasers were processed to achieve laterally a nearly diffraction-limited beam quality with beam propagation factors smaller than 2. Depending on the emission wavelength, the tapered devices reach an output power up to 12 W and a brightness of 1 GWmiddotcm-2middotsr-1.
Keywords
brightness; laser beams; quantum well lasers; beam propagation factor; diffraction-limited beam quality; emission wavelength; high-brightness quantum well tapered laser; high-power quantum well laser; narrow vertical far-field divergence; optimized tapered laser; wavelength 650 nm to 1080 nm; Diode lasers; Fiber lasers; Laser beams; Optical feedback; Power amplifiers; Power generation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Lasers; semiconductor lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2008.2010952
Filename
5068463
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