• DocumentCode
    1064168
  • Title

    High-Brightness Quantum Well Tapered Lasers

  • Author

    Sumpf, Bernd ; Hasler, Karl-Heinz ; Adamiec, Pawel ; Bugge, Frank ; Dittmar, Frank ; Fricke, Jörg ; Wenzel, Hans ; Zorn, Martin ; Erbert, Götz ; Trankle, Gunther

  • Author_Institution
    Dept. of Optoelectron., Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
  • Volume
    15
  • Issue
    3
  • fYear
    2009
  • Firstpage
    1009
  • Lastpage
    1020
  • Abstract
    High-power quantum well lasers with high brightness in the spectral range between 650 nm and 1080 nm will be presented. Improved layer structures with a narrow vertical far-field divergence down to angles of 15deg (full-width at half-maximum) were developed. For these layer structures, optimized tapered lasers were processed to achieve laterally a nearly diffraction-limited beam quality with beam propagation factors smaller than 2. Depending on the emission wavelength, the tapered devices reach an output power up to 12 W and a brightness of 1 GWmiddotcm-2middotsr-1.
  • Keywords
    brightness; laser beams; quantum well lasers; beam propagation factor; diffraction-limited beam quality; emission wavelength; high-brightness quantum well tapered laser; high-power quantum well laser; narrow vertical far-field divergence; optimized tapered laser; wavelength 650 nm to 1080 nm; Diode lasers; Fiber lasers; Laser beams; Optical feedback; Power amplifiers; Power generation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Lasers; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2008.2010952
  • Filename
    5068463