• DocumentCode
    1064196
  • Title

    Evanescent-coupled GaInNAsSb in-line fibre photodetectors

  • Author

    Yang, H. ; Khalili, A. ; Wistey, M. ; Harris, J.S.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA
  • Volume
    1
  • Issue
    4
  • fYear
    2007
  • Firstpage
    175
  • Lastpage
    177
  • Abstract
    The authors report on in-line fibre photodetectors that can measure power transfer in an optical fibre without interruption of the optical beam, showing 80% external quantum efficiency at 1316 nm wavelength. A new type of structure is used that employs GaNAsSb barriers and GalnNAsSb quantum wells grown by molecular beam epitaxy on GaAs substrates at the centre of anti-resonant reflective optical waveguides to detect long wavelength optical signals without fibre interruption.
  • Keywords
    arsenic compounds; fibre optic sensors; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; photodetectors; power measurement; GaAs; GaInNAsSb; anti-resonant reflective optical waveguides; fibre interruption; in-line fibre photodetectors; molecular beam epitaxy; optical beam; optical fibre; optical signals; power transfer; quantum wells;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IET
  • Publisher
    iet
  • ISSN
    1751-8768
  • Type

    jour

  • DOI
    10.1049/iet-opt:20060065
  • Filename
    4277179