DocumentCode
1064418
Title
Equilateral-Triangle and Square Resonator Semiconductor Microlasers
Author
Yang, Yue-De ; Huang, Yong-Zhen ; Che, Kai-Jun ; Wang, Shi-Jiang ; Hu, Yong-Hong ; Du, Yun
Author_Institution
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
Volume
15
Issue
3
fYear
2009
Firstpage
879
Lastpage
884
Abstract
The characteristics of equilateral-triangle resonator (ETR) and square resonator microlasers are reported, which are potential light sources in the photonic integrations. Based on the numerical simulations, we find that high-efficiency directional emission can be achieved for the triangle and square microlasers by directly connecting an output waveguide to the resonators. The electrically injected InP/InGaAsP ETR and square resonator microlasers with a 2-mum-wide output waveguide were fabricated by standard photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave (CW) operations were achieved for the ETR microlasers with the side length from 10 to 30 mum and the square resonator microlasers with the side length of 20 mum. The output power versus CW injection current and the laser spectra are presented for an ETR microlaser up to 310 K and a square resonator microlaser to 305 K. The lasing spectra with mode wavelength intervals as that of whispering-gallery-type modes and Fabry-Parot modes are observed for two square lasers, which can lase at low temperature and room temperature, respectively.
Keywords
Fabry-Perot resonators; III-V semiconductors; arsenic compounds; electro-optical devices; gallium compounds; indium compounds; integrated optics; laser cavity resonators; laser modes; micro-optics; numerical analysis; optical fabrication; photolithography; semiconductor lasers; spectral analysis; sputter etching; whispering gallery modes; ETR microlaser; Fabry-Parot mode; InP-InGaAsP; continuous-wave operation; electrically injected laser; equilateral-triangle resonator; laser spectra; light source; numerical simulation; optical waveguide fabrication; photolithography; photonic integration; plasma etching technique; size 10 mum to 30 mum; size 2 mum; square resonator semiconductor microlaser; temperature 293 K to 298 K; temperature 305 K; temperature 310 K; whispering-gallery-type mode; Indium phosphide; Joining processes; Laser modes; Light sources; Lithography; Numerical simulation; Plasma applications; Plasma temperature; Power lasers; Semiconductor waveguides; InP/InGaAsP; microlaser; microresonator; optical resonators; quality factors; semiconductor lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2008.2010236
Filename
5068486
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