DocumentCode
1064730
Title
Efficiency of long-wavelength lasers from an analysis of the temperature and pressure dependence of their spontaneous emission
Author
Poguntke, K.R. ; Adams, A.R.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
Volume
28
Issue
12
fYear
1992
fDate
12/1/1992 12:00:00 AM
Firstpage
2664
Lastpage
2668
Abstract
The spontaneous emission efficiency of 1.5-μm quantum-well lasers have been analyzed to yield directly the ratio C /B 3/2 where C and B are the Auger and radiative recombination coefficients, respectively. The temperature dependence of the result yields an activation energy for the Auger process of between 105 and 124 meV, in good agreement with theory, while the pressure dependence of the results can also be explained in terms of pressure induced changes in the band structure. The authors believe the approach adopted provides a useful measure of the fundamental properties of the band structure of the laser and is helpful when comparing devices where, for example, improvements are sought by introducing strain or different degrees of quantum confinement
Keywords
laser theory; semiconductor lasers; 1.5 micron; 105 to 124 meV; Auger coefficients; Auger process; IR; InGaAs-GaInAsP-InP; activation energy; band structure; emission efficiency; long-wavelength lasers; pressure dependence; pressure induced changes; quantum confinement; quantum-well lasers; radiative recombination coefficients; semiconductors; spontaneous emission; strain; temperature dependence; Indium phosphide; Laser theory; Potential well; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission; Strain measurement; Temperature dependence; Tensile strain;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.166455
Filename
166455
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