DocumentCode
1065858
Title
Characterization of semiconductor materials by Raman microprobe
Author
Nakashima, S. ; Hangyo, M.
Author_Institution
Dept. of Appl. Phys., Osaka Univ., Japan
Volume
25
Issue
5
fYear
1989
fDate
5/1/1989 12:00:00 AM
Firstpage
965
Lastpage
975
Abstract
The physical background of semiconductor characterization by Raman scattering and some of the technical problems in the Raman microprobe are described. Several significant applications for semiconductors in bulk, thin film, and device configurations are presented.
Keywords
Raman spectra of inorganic solids; reviews; semiconductor thin films; semiconductors; spectrochemical analysis; Raman microprobe; Raman scattering; bulk configuration; device configurations; semiconductor characterization; semiconductor materials; thin film configuration; Capacitive sensors; Crystallography; Crystals; Optical detectors; Optical films; Optical microscopy; Optical scattering; Raman scattering; Semiconductor materials; Spectroscopy;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.27987
Filename
27987
Link To Document