DocumentCode
1065959
Title
MP-A8 Two-dimensional numerical simulation of GaAs MESFET´s with recessed-gate structure
Author
Frensley, W.R.
Volume
26
Issue
11
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1829
Lastpage
1829
Keywords
Breakdown voltage; Gallium arsenide; Geometry; Instruments; Laboratories; MESFETs; Numerical simulation; Power generation; Semiconductor process modeling; Surface treatment;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19702
Filename
1480280
Link To Document