• DocumentCode
    1066059
  • Title

    MP-B6 a nonvolatile static RAM cell utilizing a silicon dioxide, thin silicon nitride layer-silicon dioxide gate insulator

  • Author

    Waites, R.F. ; Sze Hon Kwan

  • Volume
    26
  • Issue
    11
  • fYear
    1979
  • fDate
    11/1/1979 12:00:00 AM
  • Firstpage
    1832
  • Lastpage
    1832
  • Keywords
    Insulation; MOSFETs; Nonvolatile memory; Polarization; Random access memory; Read-write memory; Silicon compounds; Subthreshold current; Threshold voltage; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19712
  • Filename
    1480290
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1066059