DocumentCode

1066415

Title

TP-C9 high-gain InP-InGaAsP avalanche photodiodes

Author

Nishida, Keisuke ; Taguchi, Katsuhisa ; Matsumoto, Yuki

Volume

26

Issue

11

fYear

1979

fDate

11/1/1979 12:00:00 AM

Firstpage

1844

Lastpage

1844

Keywords

Avalanche breakdown; Avalanche photodiodes; Etching; Fabrication; Indium phosphide; Laboratories; P-n junctions; Semiconductor diodes; Substrates; Zinc;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1979.19747

Filename

1480325