A 28-GHz monolithic integrated quadrature oscillator in SiGe bipolar technology

Author

Hackl, Sabine ; Böck, Josef ; Ritzberger, Günter ; Wurzer, Martin ; Scholtz, Arpad L.

Author_Institution

Infineon Technol., Munich, Germany

Volume

38

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

135

Lastpage

137

Abstract

This paper presents a 28-GHz monolithic quadrature voltage-controlled oscillator (QVCO) realized in a preproduction 0.4-μm SiGe bipolar technology with 85-GHz transit frequency. QVCOs efficiently drive quadrature modulators and demodulators in receivers or transmitters. At 28.9 GHz, the circuit provides -14.7 dBm of output power and phase noise of -84.2 dBc/Hz at a 1-MHz offset. The two output signals are in quadrature with phase error of about 5°. Tuning of the QVCO may be done in the frequency range from 24.8 to 28.9 GHz with nearly constant output power. The circuit consumes 25.8 mA from the 5 V voltage supply.

Keywords

Ge-Si alloys; MMIC oscillators; bipolar MMIC; circuit tuning; integrated circuit design; semiconductor materials; voltage-controlled oscillators; 0.4 micron; 24.8 to 28.9 GHz; 25.8 mA; 28 GHz; 5 V; 85 GHz; SiGe; SiGe bipolar technology; monolithic integrated quadrature oscillator; monolithic quadrature VCO; phase noise; preproduction bipolar technology; quadrature demodulators; quadrature modulators; receivers; transmitters; tuning; voltage controlled oscillator; Circuit optimization; Demodulation; Frequency; Germanium silicon alloys; Integrated circuit technology; Phase noise; Power generation; Silicon germanium; Transmitters; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2002.806274

Filename

1158791