• DocumentCode
    1067090
  • Title

    A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme

  • Author

    Arsovski, Igor ; Chandler, Trevis ; Sheikholeslami, Ali

  • Author_Institution
    Toronto Univ., Ont., Canada
  • Volume
    38
  • Issue
    1
  • fYear
    2003
  • fDate
    1/1/2003 12:00:00 AM
  • Firstpage
    155
  • Lastpage
    158
  • Abstract
    A 256×144-bit TCAM is designed in 0.18-μm CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed match-line (ML) sense scheme reduces power consumption by minimizing switching activity of search-lines and limiting voltage swing of MLs. The scheme achieves a match-time of 3 ns and operates at a minimum supply voltage of 1.2 V.
  • Keywords
    CMOS memory circuits; content-addressable storage; low-power electronics; 1.2 V; 3 ns; 36864 bit; 4T static storage; CMOS process; associative memories; current-race sensing scheme; low power operation; match-line sense scheme; power consumption reduction; switching activity minimisation; ternary CAM; ternary content-addressable memory; CADCAM; Circuit simulation; Clocks; Computer aided manufacturing; Energy consumption; MOS devices; Multilevel systems; Pattern matching; Random access memory; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2002.806264
  • Filename
    1158796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067090