1/f Noise in (Hg, Cd)Te photodiodes

Author

Tobin, Stephen P. ; Iwasa, Shigesato ; Tredwell, Timothy J.

Author_Institution

Honeywell Electro-Optics Center, Lexington, MA

Volume

27

Issue

1

fYear

1980

fDate

1/1/1980 12:00:00 AM

Firstpage

43

Lastpage

48

Abstract

In this article we present results of experiments to characterize 1/ $f$ noise in Hg0.7Cd0.3Te n⁺-on-p junction photodiodes. Under zero-bias voltage conditions, the photodiodes display no 1/ $f$ noise, even in the presence of large photocurrents. Under reverse-bias voltage operation, 1/ $f$ noise is observed. In these experiments, the 1/ $f$ noise was measured as a function of temperature, diode bias voltage, and photon flux. Since these parameters varied the relative contributions of the various current mechanisms, the diode current mechanism responsible for 1/ $f$ noise was isolated. It was found that 1/ $f$ noise is independent of photocurrent and diffusion current but is linearly related to surface generation current. It is proposed that 1/ $f$ noise in reverse-biased (Hg, Cd)Te photodiodes is a result of modulation of the surface generation current by fluctuations in the surface potential.

Keywords

Diodes; Displays; Mercury (metals); Noise generators; Noise measurement; Photoconductivity; Photodiodes; Tellurium; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1980.19817

Filename

1480610