• DocumentCode
    1068874
  • Title

    A two-dimensional simulation of a cooled, submicrometer indium arsenide Schottky-gate FET

  • Author

    Reich, Robert K. ; Ferry, David K.

  • Author_Institution
    Colorado State University, Fort Collins, CO
  • Volume
    27
  • Issue
    6
  • fYear
    1980
  • fDate
    6/1/1980 12:00:00 AM
  • Firstpage
    1062
  • Lastpage
    1065
  • Abstract
    A two-dimensional simulation of an InAs, Schottky-gate FET operated at 77 K is reported. A device of 0.25-µm source-drain spacing is assumed. The full field-dependent mobility is treated. The results suggest that such a device would have performance characteristics comparable even to Josephson junctions for high-speed low-power logic applications.
  • Keywords
    Circuits; Conducting materials; Electron mobility; Gallium arsenide; Indium; Josephson junctions; Logic devices; Microwave FETs; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19987
  • Filename
    1480780
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1068874