DocumentCode
1068988
Title
Status of the GaAs metal—oxide—semiconductor technology
Author
Mimura, Takashi ; Fukuta, Masumi
Author_Institution
Fujitsu Laboratories Ltd., Kawasaki, Japan
Volume
27
Issue
6
fYear
1980
fDate
6/1/1980 12:00:00 AM
Firstpage
1147
Lastpage
1155
Abstract
A review of recent and current work on GaAs insulated-gate technology is presented. First, various techniques for the formation of heteromorphic and homomorphic dielectrics are outlined and some important aspects of properties of these dielectrics are reviewed. Second, MOSFET structures, fabrication procedures, and microwave performance are described. Third, the application of GaAs MOSFET´s to digital integrated circuits is summarized.
Keywords
Capacitance-voltage characteristics; Dielectrics and electrical insulation; Digital integrated circuits; Fabrication; Gallium arsenide; Integrated circuit technology; MOSFET circuits; Oxidation; Paper technology; Plasma temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19998
Filename
1480791
Link To Document