DocumentCode
1069463
Title
Dependence of longitudinal mode structure on injected carrier diffusion in diode lasers
Author
Streifer, William ; Burnham, Robert D. ; Scifres, Don R.
Author_Institution
Xerox Palo Alto Research Center, Palo Alto, CA
Volume
13
Issue
6
fYear
1977
fDate
6/1/1977 12:00:00 AM
Firstpage
403
Lastpage
404
Abstract
We hypothesize that the longitudinal mode structure of diode lasers is greatly influenced by the axial diffusion of injected carriers. Thus several longitudinal modes can coexist in lasers which utilize both injected electrons and slowly diffusing injected holes, whereas lasers which only use injected electrons should operate in a single longitudinal mode.
Keywords
Bandwidth; Charge carrier processes; Diode lasers; Electrons; Gallium arsenide; Laser modes; Laser theory; Neodymium; Optical scattering; Particle scattering;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1977.1069376
Filename
1069376
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