• DocumentCode
    1069463
  • Title

    Dependence of longitudinal mode structure on injected carrier diffusion in diode lasers

  • Author

    Streifer, William ; Burnham, Robert D. ; Scifres, Don R.

  • Author_Institution
    Xerox Palo Alto Research Center, Palo Alto, CA
  • Volume
    13
  • Issue
    6
  • fYear
    1977
  • fDate
    6/1/1977 12:00:00 AM
  • Firstpage
    403
  • Lastpage
    404
  • Abstract
    We hypothesize that the longitudinal mode structure of diode lasers is greatly influenced by the axial diffusion of injected carriers. Thus several longitudinal modes can coexist in lasers which utilize both injected electrons and slowly diffusing injected holes, whereas lasers which only use injected electrons should operate in a single longitudinal mode.
  • Keywords
    Bandwidth; Charge carrier processes; Diode lasers; Electrons; Gallium arsenide; Laser modes; Laser theory; Neodymium; Optical scattering; Particle scattering;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1977.1069376
  • Filename
    1069376