• DocumentCode
    1069473
  • Title

    Vertical p-n-p for complementary bipolar technology

  • Author

    Magdo, Ingrid E.

  • Author_Institution
    IBM Corporation, East Fishkill, NY
  • Volume
    27
  • Issue
    8
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    1394
  • Lastpage
    1396
  • Abstract
    A process to fabricate high-performance vertical p-n-p devices has been developed. The use of a high-dose boron-implanted poly-Si layer to form the emitter is essential to obtain shallow emitters with high emitter gradient. The devices exhibit very high current gain (>200) and a calculated cutoff frequency of 3.6 GHz. The process as developed is compatible with the n-p-n process and, thus, suitable for fabrication of complementary bipolar devices.
  • Keywords
    Annealing; Boron; Circuits; Cutoff frequency; Data systems; Fabrication; Implants; Silicon; Stacking; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20046
  • Filename
    1480839
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1069473