• DocumentCode
    1069675
  • Title

    Computer analysis of a short-channel BC MOSFET

  • Author

    Oka, Hideki ; Nishiuchi, Koichi ; Nakamura, Tetsuo ; Ishikawa, Hajime

  • Author_Institution
    Fujitsu Laboratories, Ltd., Kawaski, Japan
  • Volume
    27
  • Issue
    8
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    1514
  • Lastpage
    1520
  • Abstract
    This paper describes the results of a two-dimensional numerical analysis of a normally-off-type buried-channel MOSFET (BC MOSFET). This device has two operation modes whose boundary is a flat-band voltage. Bulk current is a main current when V_{SG} < V_{FB} . Short-channel effects, like the decrease of a threshold voltage, were examined. Devices with a thinner gate oxide, a shallower channel depth, and a higher substrate concentration are effective for the short-channel effect.
  • Keywords
    Current density; Electrodes; Electron mobility; Electrooptic effects; Impurities; MOSFET circuits; Numerical analysis; Permittivity; Threshold voltage; Virtual manufacturing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20065
  • Filename
    1480858
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1069675