DocumentCode
1070029
Title
The bent-guide structure AlGaAs-GaAs semiconductor laser
Author
Matsumoto, Nobuo
Author_Institution
Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume
13
Issue
8
fYear
1977
fDate
8/1/1977 12:00:00 AM
Firstpage
560
Lastpage
564
Abstract
The laser oscillation of GaAs-AlGaAs DH-structure laser with a bent guide was reported. The threshold current density Jth was about 3-15 kA/cm2, and the longitudinal mode was single up to 1.7 times Jth . From the simulation experiments, it was concluded that this mode selectivity was due to the multicavity effect.
Keywords
Fiber lasers; Gold; Helium; Laser modes; Optical coupling; Optical device fabrication; Semiconductor diodes; Semiconductor lasers; Surface waves; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1977.1069428
Filename
1069428
Link To Document