• DocumentCode
    1070029
  • Title

    The bent-guide structure AlGaAs-GaAs semiconductor laser

  • Author

    Matsumoto, Nobuo

  • Author_Institution
    Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
  • Volume
    13
  • Issue
    8
  • fYear
    1977
  • fDate
    8/1/1977 12:00:00 AM
  • Firstpage
    560
  • Lastpage
    564
  • Abstract
    The laser oscillation of GaAs-AlGaAs DH-structure laser with a bent guide was reported. The threshold current density Jthwas about 3-15 kA/cm2, and the longitudinal mode was single up to 1.7 times Jth. From the simulation experiments, it was concluded that this mode selectivity was due to the multicavity effect.
  • Keywords
    Fiber lasers; Gold; Helium; Laser modes; Optical coupling; Optical device fabrication; Semiconductor diodes; Semiconductor lasers; Surface waves; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1977.1069428
  • Filename
    1069428