• DocumentCode
    1070112
  • Title

    A 1024-element linear CCD photo sensor with unique photodiode structure

  • Author

    Ohba, Shinya ; Aoki, Masakazu ; Nakai, Masaaki ; Shimada, Shigeru ; Uchiumi, Kyotake ; Fujita, Minoru ; Kubo, Masaharu

  • Author_Institution
    Hitachi, Ltd., Kokubunji, Tokyo, Japan
  • Volume
    27
  • Issue
    9
  • fYear
    1980
  • fDate
    9/1/1980 12:00:00 AM
  • Firstpage
    1804
  • Lastpage
    1808
  • Abstract
    The development of a novel 1024-element linear CCD sensor is reported. The device incorporates a unique photodiode structure which includes a p-n junction diode for photo sensing and a surface MOS diode for charge storing. Only two power supplies are required to drive this device. The following good results are obtained with this device: 1.0-lx . s saturation exposure, 0.5-V saturation output, ±2.5-percent signal nonuniformity, and a dark-current saturation time of 5 s at room temperature. The device is expected to find broad application in the facsimile reader field.
  • Keywords
    Charge coupled devices; Diodes; Facsimile; P-n junctions; Photodiodes; Power supplies; Sensor arrays; Shift registers; Signal to noise ratio; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20107
  • Filename
    1480900