Compound Bragg reflection filters made by spatial frequency doubling lithography

Author

Henry, C.H. ; Shani, Y. ; Kistler, R.C. ; Jewell, T.E. ; Pol, V. ; Olsson, N.A. ; Kazarinov, R.F. ; Orlowsky, K.J.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

7

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1379

Lastpage

1385

Abstract

A report is presented on the fabrication of complex Bragg filters with resonant wavelengths near 1.55 μm, patterned by photolithography using a high-resolution deep ultraviolet stepper. The projection of gratings with quarter-micrometer features was made possible by the use of spatial frequency-doubling lithography. A single chip, processed entirely in the silicon facility, was used to demonstrate five Bragg reflectors of different wavelengths, a quarter-wave shifted resonator, broadband stacked filters with as many as 15 uniform Bragg reflector sections of different Bragg wavelengths, and broadband stacked filters containing a passband within the reflection band. The filters exhibited nearly ideal spectral behavior

Keywords

integrated optics; optical filters; photolithography; 1.55 micron; Si; broadband stacked filters; complex Bragg filters; gratings; high-resolution deep ultraviolet stepper; passband; photolithography; quarter-micrometer features; quarter-wave shifted resonator; reflection band; resonant wavelengths; single chip; spatial frequency doubling lithography; spectral behavior; Band pass filters; Fabrication; Frequency; Gratings; Lithography; Passband; Reflection; Resonance; Resonator filters; Silicon;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.50717

Filename

50717