DocumentCode
1071051
Title
Chemical and Discharge Effects in Plasma Etching with Freons and Other Electronegative Gases
Author
Ibbotson, D.E. ; Flamm, D.L.
Author_Institution
Bell Laboratories Murray Hill, NJ
Issue
2
fYear
1982
fDate
4/1/1982 12:00:00 AM
Firstpage
163
Lastpage
167
Abstract
Low pressure plasmas of halogens, halocarbons, and their mixtures are in general use for etching micron-sized features on Si, GaAs, and InP. Several processing parameters may be varied to optimize plasma conditions for etching rates and profile control. Manipulation of substrate temperature, pressure, applied frequency and gas feed composition are discussed in detail and specific examples are presented to illustrate these effects on etching Si and III-V compounds.
Keywords
Chemicals; Etching; Frequency; Gallium arsenide; Gases; Indium phosphide; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature;
fLanguage
English
Journal_Title
Electrical Insulation, IEEE Transactions on
Publisher
ieee
ISSN
0018-9367
Type
jour
DOI
10.1109/TEI.1982.298551
Filename
4080936
Link To Document