Pixel frontend electronics in a radiation hard technology for hybrid and monolithic applications

Author

Pengg, F. ; Campbell, M. ; Heijne, E.H.M. ; Snoeys, W.

Author_Institution

CERN, Geneva, Switzerland

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

1732

Lastpage

1736

Abstract

Pixel detector readout cells have been designed in the radiation hard DMILL technology and their characteristics evaluated before and after irradiation to 14 Mrad. The test chip consists of two blocks of six readout cells each. Two different charge amplifiers are implemented, one of them using a capacitive feedback loop, the other the fast signal charge transfer to a high impedance integrating node. The measured equivalent noise charge is 110e(-) r.m.s. before and 150e(-) r.m.s. After irradiation. With a discriminator threshold set to 5000e(-), which reduces for the same bias setting to 4000e(-) after irradiation, the threshold variation is 300e(-) r.m.s. and 250e(-) r.m.s. Respectively. The time walk is 40 ns before and after irradiation. The use of this SOI technology for monolithic integration of electronics and detector in one substrate is under investigation

Keywords

detector circuits; discriminators; nuclear electronics; preamplifiers; pulse shaping circuits; radiation hardening (electronics); semiconductor device noise; 14 Mrad; 40 ns; SOI technology; capacitive feedback loop; charge amplifiers; equivalent noise charge; frontend electronics; irradiation; monolithic integration; pixel detector readout cells; radiation hard DMILL technology; signal charge transfer; threshold variation; time walk; Charge measurement; Charge transfer; Current measurement; Feedback loop; Impedance; Monolithic integrated circuits; Noise measurement; Radiation detectors; Semiconductor device measurement; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.507212

Filename

507212