DocumentCode

1071188

Title

TP-A7 silicon-nickel silicide heterostructures grown by molecular-beam epitaxy

Author

Bean, J.C. ; Poate, J.M.

Volume

27

Issue

11

fYear

1980

fDate

11/1/1980 12:00:00 AM

Firstpage

2190

Lastpage

2190

Keywords

Crystallization; Laser modes; Laser theory; Molecular beam epitaxial growth; Nickel; Silicides; Silicon; Substrates; Surface emitting lasers; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1980.20212

Filename

1481005