• DocumentCode
    1071420
  • Title

    WA-B5 high-electron mobility transistors with selectively doped GaAs/n-AlGaAs heterojunctions

  • Author

    Mimura, Takashi ; Hiyamizu, S. ; Hashimoto, Hiroya ; Fukuta, Masahiro

  • Volume
    27
  • Issue
    11
  • fYear
    1980
  • fDate
    11/1/1980 12:00:00 AM
  • Firstpage
    2197
  • Lastpage
    2197
  • Keywords
    Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; Hall effect; Heterojunctions; MODFETs; Microwave devices; Superlattices; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20234
  • Filename
    1481027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1071420