DocumentCode
1071842
Title
Generalized guide for MOSFET miniaturization
Author
Brews, J.R. ; Fichtner, W. ; Nicollian, E.H. ; Sze, S.M.
Author_Institution
Bell Laboratories, Murray Hill, New Jersey
Volume
1
Issue
1
fYear
1980
fDate
1/1/1980 12:00:00 AM
Firstpage
2
Lastpage
4
Abstract
As MOSFET dimensions are reduced, lower voltages, shallower junctions, thinner oxides, and heavier doping help to maintain long-channel behavior. A simple, empirical relation has been found between these parameters and the minimum channel length for which long-channel subthreshold behavior will be observed. This approximate relation provides an estimate for MOSFET parameters not requiring reduction of all dimensions by the same scale factor.
Keywords
Computer errors; Current measurement; Displays; Doping; Length measurement; MOSFET circuits; Parameter estimation; Testing; Variable structure systems; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25205
Filename
1481067
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