• DocumentCode
    1072517
  • Title

    Double heterostructure Ga0.47In0.53As MESFETs by MBE

  • Author

    Ohno, Hideo ; Barnard, Joseph ; Wood, Colin E.C. ; Eastman, Lester F.

  • Author_Institution
    Cornell University, Ithaca, New York
  • Volume
    1
  • Issue
    8
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    154
  • Lastpage
    155
  • Abstract
    Ga0.47In0.53As MESFETs have been fabricated on InP substrates. The low barrier height of Ga0.47In0.53As (0.20 eV) which makes simple GaInAs MESFETs at this composition impractical, has been overcome by using thin Al0.48In0.52As layers between gate metal and GaInAs active layers. Al0.48In0.52As has also been exploited in the form of buffer layers. The double heterostructure FET wafers with single crystal Al gate metal were grown by molecular beam epitaxy (MBE). The 2.75 µm gate length MESFETs showed d.c. transconductance gm= 57 mS mm-1in spite of nonoptimized dimensions.
  • Keywords
    Buffer layers; Electrons; Fabrication; Gallium arsenide; Indium phosphide; Lattices; MESFETs; Molecular beam epitaxial growth; Schottky barriers; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25270
  • Filename
    1481132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072517